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Kunsheng - Model KS-PECVD-T1200 -High Temperature PECVD System
High temperature PECVD system for carbon nanotube/plasma enhanced chemical vapor deposition; PECVD system, by ionizing atom-containing gas with microwave or radio frequency, create active plasma locally, which will react easily to deposit and form the expected thin film. It widely used to product high-quality SiO2 film, Si3N4 film,diamond film, hard thin film, optical thin film, CNT, C/Ccomposite materials, SiC coating, Graphene etc.
Model: KS-PECVD-T1200
Max temperature: 1200C
Working temperature: 1100C
Chamber: Split type and upper part can be opened
Heating element: Resistance wire with Mo
Fiber liner: 1430 Type alumina fiber
Temperature zone: 220+220mm dual zones (can customized)
Power: 220V, 50Hz, single phase at Max 3 Kw (can customized)
Gas control: Float flow meter/ Mass flow meter
Vacuum unit: Rotary vane/Diffusion/Turbo molecular pump
RF power: 100-1000Kw
Optional parts: water chiller/ digital vacuum gauge