Semilab Semiconductor Physics Laboratory Co. Ltd.

SemilabModel COREMA-2000 -Contactless Resistivity Mapping

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The COREMA-2000 series offers precise, non-destructive, contactless resistivity measurement solutions designed primarily for semi-insulating compound semiconductors such as SiC, GaN, GaAs, CdTe, GaO, and InP. It supports both research and industrial semiconductor manufacturing environments with high accuracy and repeatability.

Most popular related searches
  • Resistivity mapping and uniformity assessment of compound semiconductor wafers before chip fabrication
  • Quality control of incoming wafers in semiconductor production lines
  • Real-time process monitoring of high-resistivity substrates in RF, optoelectronics, photonics, military, aerospace, and power device manufacturing
  • Applicable to materials such as GaAs, SiC, GaN, GaO, CdTe, InP, and other semi-insulating substrates
  • Original developer of the SEMI standard and leading global support network
  • Fully compliant with SEMI M87-0422 industry standard for non-contact resistivity measurement
  • Trusted and deployed globally in 14+ countries
  • No calibration needed for routine operation
  • User-friendly graphical interface with colored topographic display
  • Non-contact, non-destructive full-wafer resistivity measurement
  • Excellent measurement repeatability and wide measurement range
  • Measurement Principle: Contactless capacitance technique for full-water resistivity characterization across a very wide range in the semi-insulating region
  • Operator & Automation:
    • Full automation supported on request (especially Corema-2201 model with robotic wafer handling)
    • Measurement parameters and process sequences fully customizable
    • Semi-automatic wafer placement
  • Data & Software:
    • Built-in software provides detailed wafer maps and resistivity profiles
    • Customizable reporting tailored to industry standards with data available in various formats; Semilab internal format, TXT, and PDF
  • Excellent repeatibility,  <1%* (*:get in touch for further details),
  • Sample Surface: Etched or polished, as-cut or bare wafer,
  • Sample size up to 200 mm diameter,
  • Minimum sample size: 10 x 10 mm shard for single point measurement,
  • Wide measurement range: 105to 10¹² Ω·cm
  • Measurement parameters:
    • Full wafer topogram with up to 1024x1024 data points
    • Fast evaluation
    • Wafer diameter: up to 200 mm
    • Manual wafer handling
    • Automatic non-contact adjustment
    • Mapping capability