CN1 - Atomic Layer Deposition (Atomic-Premium)

Substrate Size : 4 ~ 12” Standard (Wafer). Thermal ALD Process (Plasma Process Available). Gap Adjustable between Showerhead and Substrate. Gas Delivery System : Bubbler, LDS etc. Max Temperature : 500 ? (@ Wafer). No. of Precursor Canisters : Up to 4 Sets (Standard). Pressure Control : Automatic Control by Throttle Valve. Process Gauge : CDG Gauge (10 Torr). Process Pump : Dry Pump (Rotary Pump Available). Pumping Line Hot Trap to Reduce Particle.